| PART |
Description |
Maker |
| CXD3122R |
CMOS Digital Line Memory
|
ETC
|
| CAT28F002 CAT28F002PI-90BT CAT28F002NI-90BT CAT28F |
90ns 2M-bit CMOS boot block flash memory
150ns 2M-bit CMOS boot block flash memory
120ns 2M-bit CMOS boot block flash memory
2 Megabit CMOS Boot Block Flash Memory
High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
|
http://
CATALYST[Catalyst Semiconductor]
|
| AT29BV040A-25 AT29BV040A-35TC AT29BV040A-25TC AT29 |
High Speed CMOS Logic Octal Non-Inverting Buffers and Line Drivers with 3-State Outputs 20-SOIC -55 to 125
4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory 4兆位12k × 82.7伏电池电压的CMOS闪存
|
Atmel Corp.
Atmel, Corp.
|
| HCTS157MS HCTS157HMSR |
HCT SERIES, QUAD 2 LINE TO 1 LINE MULTIPLEXER, TRUE OUTPUT, UUC16
Multiplexer, Digital, 2-Input, TTL Inputs, Quad, Rad-Hard, High-Speed, CMOS, Logic
|
INTERSIL CORP
|
| AT17C128A AT17C128A-10JC AT17C128A-10JI AT17C65A A |
High Speed CMOS Logic 3-to-8 Line Decoder Demutiplexer with Address Latches 16-PDIP -55 to 125
High Speed CMOS Logic 3-to-8 Line Decoder Demutiplexer with Address Latches 16-SOIC -55 to 125
FPGA Configuration EEPROM 128K X 1 CONFIGURATION MEMORY, PQCC20
FPGA Configuration EEPROM 256K X 1 CONFIGURATION MEMORY, PQCC20
FPGA Configuration EEPROM FPGA配置的EEPROM
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| TC74ACT139FN07 TC74ACT139F TC74ACT139FN-07 TC74ACT |
CMOS Digital Integrated Circuit Silicon Monolithic Dual 2-to-4 Line Decoder
|
Toshiba Semiconductor
|
| TE28F640C3 TE28F160C3 TE28F800C3 28F160C3 28F320C3 |
3 Volt Intel Advanced Boot Block Flash Memory
IC, DIGITAL, 1 GATE SCHMITT-TRIGGER, INVERTER, CMOS, 1.65-5.5V, 4.6NS, SC-70-5,
|
INTEL[Intel Corporation]
Intel Corp.
|
| AME8834AEIV250L AME8833AEEV285L AME8833BEEV285L AM |
High PSRR, 150mA CMOS LDO
3-Line To 8-Line Decoders/Demultiplexers 16-SOIC -40 to 85 高PSRR50mA的CMOS LDO稳压
3-Line To 8-Line Decoders/Demultiplexers 16-TSSOP -40 to 85 高PSRR50mA的CMOS LDO稳压
RES CERAMIC COMP 22K OHM 1W 高PSRR50mA的CMOS LDO稳压
Quadruple Positive-Nand Gates With Schmitt-Trigger Inputs 14-TSSOP -40 to 85 高PSRR50mA的CMOS LDO稳压
High PSRR, 150mA CMOS LDO 高PSRR50mA的CMOS LDO稳压
3-Line To 8-Line Decoders/Demultiplexers 16-SSOP -40 to 85
3-Line To 8-Line Decoders/Demultiplexers 16-VQFN -40 to 85
3-Line To 8-Line Decoders/Demultiplexers 16-TVSOP -40 to 85
High PSRR/ 150mA CMOS LDO
|
AME, Inc.
Analog Microelectronics
|
| HCS154MS HCS154D HCS154DMSR HCS154HMSR HCS154K HCS |
Multiplexer, Digital, 4-to-16, Rad-Hard, High-Speed, CMOS, Logic
Radiation Hardened 4-to-16 Line Decoder/Demultiplexer
|
INTERSIL[Intersil Corporation]
|
| MCP40D19T-103AE_LT MCP40D19-502AE_LT MCP40D17 MCP4 |
10K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 128 POSITIONS, PDSO6
7-Bit Single I2C?/a> (with Command Code) Digital POT with Volatile Memory in SC70
7-Bit Single I2C (with Command Code) Digital POT with Volatile Memory in SC70
7-Bit Single I2C垄芒 (with Command Code) Digital POT with Volatile Memory in SC70
|
Microchip Technology
|
| AM29LV102B AM29LV102BB-120EC AM29LV102BB-120ECB AM |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory
IC SMT SRAM 128K X 8 70NS 5V SOP-32
SRAM; Memory Type:Asynchronous SRAM; Memory Size:1MB; Memory Configuration:64K x 16; Access Time, Tacc:10ns; Package/Case:44-TSOP-II; Operating Temp. Max:70 C; Operating Temp. Min:0 C RoHS Compliant: Yes
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区32引脚闪存
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
